N-ChannelEnhancementModeMOSFETFeatureSC-59●30V/5.8A,RDS(ON)=35mΩ(MAX)@VGS=10V.3RDS(ON)=40mΩ(MAX)@VGS=4.5V.RDS(ON)=55mΩ(MAX)@VG...
深圳市富满电子集团股份有限公司SHENZHENFINEMADELECTRONICSGROUPCO.,LTD.9926A(文件编号：S&CIC1368)20VN沟道增强型MOS场效应管www.superc...
深圳市富满电子集团股份有限公司SHENZHENFINEMADEELECTRONICSGROUPCO.,LTD.8205B(文件编号：S&CIC1639)20VN沟道增强型MOS场效应管www.super...
深圳市富满电子集团股份有限公司SHENZHENFINEMADEELECTRONICSGROUPCO.,LTD.3415E(文件编号：S&CIC1597)9VP沟道MOS场效应管www.superchip.cn...
深圳市富满电子集团股份有限公司SHENZHENFINEMADELECTRONICSGROUPCO.,LTD.2302B(文件编号：S&CIC1604)30VN沟道增强型MOS场效应管www.superc...
深圳市富满电子集团股份有限公司SHENZHENFINEMADEELECTRONICSGROUPCO.,LTD.2301A（文件编号：S&CIC1621）9VP沟道增强型MOS场效应管www.supe...
©SemiconductorComponentsIndustries,LLC,2013March,2019−Rev.91PublicationOrderNumber:2N7002L/D2N7002L,2V7002LSmallSignalMOSFET60V,...
www.belling.com.cnV2.0Page1BLM3400PbFreeProductN-ChannelEnhancementModePowerMOSFETDESCRIPTIONTheBLM3400usesadvancedtrenchtechnolog...
2007-04-201BF998...SiliconN_ChannelMOSFETTetrode•Short-channeltransistorwithhighS/Cqualityfactor•Forlow-noise,gain-controlledinp...
DATASHEETProductdatasheetSupersedesdataof1999Apr082004Jan13DISCRETESEMICONDUCTORSBCV27;BCV47NPNDarlingtontransistors更多资料下载请...
JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-23Plastic-EncapsulateTransistorsBCV47TRANSISTOR(NPN)FEATURESHighCollectorCurren...
2011-08-191BCR135...NPNSiliconDigitalTransistor•Switchingcircuit,inverter,interfacecircuitdrivercircuit•Builtinbiasresistor(R1=1...
AUIRF7484QVDSS40VRDS(on)max.10mID14ADescriptionSpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®P...
12313TKIMTC-00002868No.A2167-1/7http://onsemi.comSemiconductorComponentsIndustries,LLC,2013July,2013ATP401N-ChannelPowerMOSFET60V,...
ATF-541M4LowNoiseEnhancementModePseudomorphicHEMTinaMiniatureLeadlessPackageDataSheetDescriptionAvagoTechnologies’ATF‑541M4isa...
1/6©GUANGDONGHOTTECHINDUSTRIALCO.,LTDE-mail:hkt@heketai.comLOWVOLTAGEMOSFET(P-CHANNEL)FEATURESUltralowon-resistance:VDS=-30V,ID...
N-ChannelEnhancementModeMOSFETFeature30V/4.2ARDS(ON)=50mΩ(MAX)@VGS=10V.RDS(ON)=60mΩ(MAX)@VGS=4.5V.SuperHighdensecelldesignforext...
■MAXIMUMRATINGSCharacteristicSymbolMaxUnitDrain-SourceVoltageBVDSS50VGate-SourceVoltageVGS+20VDrainCurrent-continuousIDR173mADrai...
BSH205G220V,P-channelTrenchMOSFET29April2015Productdatasheet1.GeneraldescriptionP-channelenhancementmodeField-EffectTransistor(FET...
BSH205G220V,P-channelTrenchMOSFET29April2015Productdatasheet1.GeneraldescriptionP-channelenhancementmodeField-EffectTransistor(FET...
