IC封装资料_三极管_AO3401.pdf

P-ChannelEnhancementModeMOSFETFeature-30V/-4.2A,RDS(ON)=55mΩ(MAX)@VGS=RDS(ON)=70mΩ(MAX)@VGSRDS(ON)=120mΩ(MAX)@VGSSuperHighdense...