January2014ThermalCharacteristicsSymbolParameterFQD13N10LTM/FQU13N10LTUUnitRJCThermalResistance,JunctiontoCase,Max.3.13oC/WRJA...
FQD2N100/FQU2N100—N-ChannelQFET®MOSFETPublicationOrderNumber:FQU2N100/DThermalCharacteristicsSymbolParameterUnitRJCThermalResi...
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FMD5N50E5Rev1.0-1-VDSS500VID5ATrr85nsRDS(ON)Typ1.25ΩGeneralDescription：FMD5N50E5,thesiliconN-channelEnhancedVDMOSFETs,isobtained...
FDV303NDigitalFET,N-ChannelGeneralDescriptionFeaturesAbsoluteMaximumRatingsTA=25oCunlessotherwisenotedSymbolParameterFDV303NUnitsV...
1IPB042N10N3GRev.2.9,2017-07-17FinalDataSheetD²PAKDrainPin2,TabGatePin1SourcePin3MOSFETOptiMOSª3Power-Transistor,100VFeatures•N...
1IPB042N10N3GRev.2.9,2017-07-17FinalDataSheetD²PAKDrainPin2,TabGatePin1SourcePin3MOSFETOptiMOSª3Power-Transistor,100VFeatures•N...
鎵能半導體（佛山）有限公司GaNPowerSemiconductor(Foshan)co.,Ltd.www.ganpowersemi.com中國廣東省佛山市南海區桂城寶石西路1號C時代2座7...
FZT600/FZT600B140VNPNDARLINGTONTRANSISTORINSOT223Features•BVCEO>140V•BVCBO>160V•IC=2AHighContinuousCurrent•NPNDarlingtonWithGa...
TolearnmoreaboutONSemiconductor,pleasevisitourwebsiteatwww.onsemi.comPleasenote:AspartoftheFairchildSemiconductorintegration,someo...
TolearnmoreaboutONSemiconductor,pleasevisitourwebsiteatwww.onsemi.comPleasenote:AspartoftheFairchildSemiconductorintegration,someo...
TolearnmoreaboutONSemiconductor,pleasevisitourwebsiteatwww.onsemi.comPleasenote:AspartoftheFairchildSemiconductorintegration,someo...
IRF3205HEXFET®PowerMOSFET01/25/01AbsoluteMaximumRatingsParameterTyp.Max.UnitsRθJCJunction-to-Case–––0.75RθCSCase-to-Sink,Fla...
IRF2807PbFHEXFET®PowerMOSFET��������ParameterTyp.Max.UnitsRθJCJunction-to-Case–––0.65RθCSCase-to-Sink,Flat,GreasedSu...
IRF840,SiHF840www.vishay.comVishaySiliconixS16-0754-Rev.D,02-May-161DocumentNumber:91070Fortechnicalquestions,contact:hvm@vishay.c...
IRF830,SiHF830www.vishay.comVishaySiliconixS16-0754-Rev.C,02-May-161DocumentNumber:91063Fortechnicalquestions,contact:hvm@vishay.c...
DocumentNumber:91055www.vishay.comS11-1049-Rev.C,30-May-111Thisdocumentissubjecttochangewithoutnotice.THEPRODUCTSDESCRIBEDHEREINAN...
HEXFET®PowerMOSFET07/23/10ParameterMax.UnitsID@TC=25°CContinuousDrainCurrent,VGS@10V18ID@TC=100°CContinuousDrainCurrent,VGS@10V...
IRF540NPbFHEXFET®PowerMOSFET11/3/03ParameterTyp.Max.UnitsRθJCJunction-to-Case–––1.15RθCSCase-to-Sink,Flat,GreasedSurface0.50...
