DocumentNumber:91019www.vishay.comS11-0510-Rev.B,21-Mar-111Thisdatasheetissubjecttochangewithoutnotice.THEPRODUCTDESCRIBEDHEREINAN...
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IRF520NPbFHEXFET®PowerMOSFETPD-94818FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievee...
HEXFET®PowerMOSFETDSGBenefitsImprovedGate,AvalancheandDynamicdV/dtRuggednessFullyCharacterizedCapacitanceandAvalancheSOA...
1IPN70R600P7SRev.2.1,2017-09-15FinalDataSheetPG-SOT223DrainPin2,TabGatePin1SourcePin3MOSFET700VCoolMOSªP7PowerTransistorCoolMOS™...
IPP086N10N3GIPI086N10N3GIPB083N10N3GIPD082N10N3GOptiMOS™3Power-TransistorFeatures•N-channel,normallevel•ExcellentgatechargexRDS...
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ParameterMax.UnitsVDSDrain-SourceVoltage-12VID@TA=25°CContinuousDrainCurrent,VGS@-4.5V-16ID@TA=70°CContinuousDrainCurrent,VGS@-4...
HEXFET®PowerMOSFETPD-95199FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylo...
HEXFET®PowerMOSFET�������IRF7324PbFAbsoluteMaximumRatingswww.irf.com1ThermalResistanceParameterMax.UnitsRθJAMaximumJuncti...
ParameterMax.UnitsVDSDrain-SourceVoltage-40VID@TA=25°CContinuousDrainCurrent,VGS@-10V-6.2ID@TA=70°CContinuousDrainCurrent,VGS@-1...
ParameterMax.UnitsVDSDrain-SourceVoltage30VID@TC=25°CContinuousDrainCurrent,VGS@10V7.3ID@TC=70°CContinuousDrainCurrent,VGS@10V5....
IRF5803PbFVDSSRDS(on)(max)ID112m@VGS=-10V-3.4A190m@VGS=-4.5V-2.7A-40V12017-01-27AbsoluteMaximumRatingsSymbolParameterM...
������www.irf.com1PD-97034HEXFET®PowerMOSFETFeaturesofthisdesignarea150°Cjunctionoper-atingtemperature,fastswitchingspeeda...
IRF4905PbFHEXFET®PowerMOSFETPD-94816FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievee...
IRF3710PbFHEXFET®PowerMOSFET��������ParameterTyp.Max.UnitsRθJCJunction-to-Case–––0.75RθCSCase-to-Sink,Flat,GreasedSu...
�������www.irf.com1AUTOMOTIVEMOSFETPD-94653BHEXFET®PowerMOSFETVDSS=55VRDS(on)=6.5mΩID=75ASpecificallydesignedforAutomotiv...
